Please use this identifier to cite or link to this item: https://cris.library.msu.ac.zw//handle/11408/1617
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dc.contributor.authorMtangi, W.-
dc.contributor.authorNel, J.M.-
dc.contributor.authorAuret, F.D.-
dc.contributor.authorChawanda, Albert-
dc.contributor.authorDiale, M.-
dc.contributor.authorNyamhere, C.-
dc.date.accessioned2016-06-22T14:18:03Z-
dc.date.available2016-06-22T14:18:03Z-
dc.date.issued2012-
dc.identifier.issn0921-4526-
dc.identifier.urihhttp://www.sciencedirect.com/science/article/pii/S0921452611009926-
dc.identifier.urihttp://hdl.handle.net/11408/1617-
dc.description.abstractWe report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zni related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, XZn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×1017 cm−3 at 200 °C to 4.37×1018 cm-3 at 800 °C.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofseriesPhysica B: Condensed Matter;Vol. 407, No. 10; p. 1624–1627-
dc.subjectHall effect; Surface conduction; Zinc interstitials; Annealing; Shallow donorsen_US
dc.titleAnnealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnOen_US
dc.typeArticleen_US
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeArticle-
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